MS2321 Datasheet, PDF (1/5 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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MS2321
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• DESIGNED FOR HIGH POWER PULSED IFF, DME, AND
TACAN APPLICATIONS
• 20 W (typ.) IFF 1030–1090 MHz
• 15 W (min.) DME 1025–1150 MHz
• 15 W (typ.) TACAN 960–1215 MHz
• 1025 - 1150 MHz
• 50 VOLT OPERATION
• P_OUT = 15 WATTS
• G_P = 10 dB MINIMUM
• 20:1 VSWR CAPABILITY @ RATED CONDITIONS
• COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2321 is a gold metallized, silicon NPN power transistor
designed for pulsed applications with low duty cycles such as
IFF, DME and TACAN. Internal impedance matching is utilized
for maximum broadband performance and simplified external matching.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_DISS
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
65
65
3.5
1.5
87.5
+200
-65 to +150
Thermal Data
R_TH(J-C)
Junction-case Thermal Resistance
2.0
Unit
V
V
V
A
W
°C
°C
° C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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