MS2267 Datasheet, PDF (1/6 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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MONTGOMERYVILLE, PA
18936-1013
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RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• 960 – 1215MHz
• 50 VOLTS
• 5:1 VSWR CAPABILITY @ RATED CONDITIONS
• INPUT/OUTPUT MATCHING
• P_OUT = 250 WATTS
• G_P = 8.0 dB MINIMUM
• COMMON BASE CONFIGURATION
MS2267
DESCRIPTION:
The MS2267 is a high power Class C NPN transistor
specifically designed for TACAN/DME applications.
This device is capable of operation under moderate pulse
width and duty cycles. Low thermal resistance and
computerized automatic wire bonding techniques ensure
high reliability and product consistency.
The MS2267 utilizes an emitter ballasted die geometry
capable of operating into a 5:1 VSWR @ 1.0 dB overdrive.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
P_DISS
I_C
Vcc
Power Dissipation* (T_C ≤ 90°C)
Device Current*
Collector-Supply Voltage*
TJ
Junction Temperature (Pulsed RF Operation)
T_STG
Storage Temperature
Value
575
20
50
250
-65 to +200
Thermal Data
R_TH(J-C)
Junction-case Thermal Resistance∗ ⁽¹⁾
0.28
* Applies only to rated RF amplifier operation
(1) _{Infra-red scan of hot spot junction temperature at rated RF operating conditions}
Unit
W
A
V
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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