MS2231 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF AND MICROWAVE TRANSISTORS L-BAND APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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RF AND MICROWAVE TRANSISTORS
L-BAND APPLICATIONS
Features
• REFRACTORY/GOLD METALLIZATION
• EMITTER SITE BALLASTED
• LOW THERMAL RESISTANCE
• INPUT / OUTPUT MATCHING
• METAL/CERAMIC HERMETIC PACKAGE
• P_OUT = 100 W MIN.
• G_P = 6.0 dB GAIN
MS2231
DESCRIPTION:
The MS2231 is a high-power Class C transistor specifically designed
for L-Band Radar pulsed driver applications.
This device is capable of operation over a wide range of pulse widths,
duty cycles, and termperatures and is capable of withstanding 3:1
output WSWR at rated RF conditions. Low RF thermal resistance and
computerized automatic wire bonding techniques ensure high
reliability and product consistency.
The MS2231 is supplied in the grounded IMPAC™ hermetic
metal/ceramic package with internal input/output matching structures.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
P_DISS Power Dissipation* (T_C ≤ 100°C)
I_C
Device Current*
V_CC Collector-Supply Voltage*
T_J
Junction Temperature (Pulsed RF Operation)
T_STG Storage Temperature
Value
Unit
270
W
13.5
A
32
V
250
°C
– 65 to + 200 °C
Thermal Data
R_TH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
0.55
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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