MS2223 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
· GOLD METALLIZATION
· EMITTER SITE BALLASTED
· Pout = 70 W MINIMUM
· Gp = 6.7 dB
· OVERLAY GEOMETRY
· METAL/CERAMIC HERMETIC PACKAGE
· LOW THERMAL RESISTANCE
DESCRIPTION:
The MS2223 is a silicon NPN bipolar transistor designed for
avionics applications with high duty cycle requirements. Gold
metallization and emitter ballasting provides long term
reliability under long pulse formats.
MS2223
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CC
I_C
P_DISS
T_J
T_STG
Parameter
Collector-Supply Voltage*
Device Current*
Power Dissipation*
Junction Temperature
Storage Temperature
Value
32
8.0
200
200
- 65 to + 200
Thermal Data
R_TH(j-c)
Junction-Case Thermal Resistance*
* Applies only to rated RF operation.
0.68
Unit
V
A
W
°C
°C
°C/W
MSC0XXXA.DOC 5-13-99
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