MS2214 Datasheet, PDF (1/4 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• GOLD METALLIZATION
• EMITTER SITE BALLASTED
• Pout = 85 W MINIMUM
• Gp = 7.5 dB
• OVERLAY GEOMETRY
• METAL/CERAMIC HERMETIC PACKAGE
• LOW THERMAL RESISTANCE
DESCRIPTION:
The MS2214 is a silicon NPN bipolar transistor designed
for avionics applications with high duty cycle
requirements. Gold metallization and emitter ballasting
provides long term reliability under JTIDS and similar
pulse formats.
MS2214
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CC
I_C
P_DISS
T_J
T_STG
Collector-Supply Voltage*
Device Current*
Power Dissipation*
Junction Temperature
Storage Temperature
Thermal Data
R_TH(j-c)
Junction-Case Thermal Resistance*
* Applies only to rated RF operation.
Value
40
8.0
300
+250
- 65 to + 200
0.75
Unit
V
A
W
°C
°C
° C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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