MS2213 Datasheet, PDF (1/5 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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FAX: [phone]
RF & MICROWAVE TRANSISTORS
AVIONICS/JTIDS APPLICATIONS
Features
• 960-1215 MHz
• COMMON BASE
• GOLD METALLIZATION
• HERMETIC PACKAGE
• CLASS C OPERATION
• POUT = 30 W MIN. WITH 7.8 dB GAIN
MS2213
DESCRIPTION:
The MS2213 is a silicon NPN bipolar device specifically designed
for JTIDS pulsed power applications from 960-1215 MHz.
Gold metallization and emitter ballasting assure high reliability
under Class C amplifier operation. This device operates over a
wide range of pulse widths, duty cycles and temperatures, and
can withstand a 15:1 VSWR mismatch under load.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CC
I_C
P_DISS
T_J
T_STG
Collector-Supply Voltage
Device Current
Power Dissipation
Junction Temperature (RF Pulsed Operation)
Storage Temperature
Thermal Data
R_TH(J-C)
Junction-case Thermal Resistance
Value
40
3.5
75
+250
-65 to +200
2.2
Unit
V
A
W
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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