MS2211 Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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18936-1013
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RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
MS2211
Features
• 960-1215 MHz
• COMMON BASE
• GOLD METALLIZATION
• POUT = 6 W MIN. WITH 9.3 dB GAIN
• 5:1 VSWR CAPABILITY
DESCRIPTION:
The MS2211 is a silicon NPN bipolar device designed
For specialized avionics applications, including JTIDS, utilizing pulse
formats with short pulse widths and high burst rates or overall duty
cycles.
The MS2211 is housed in a hermetic package and utilizes internal
input impedance matching. Gold metallization and emitter ballasting
assures high reliability under operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
P_DISS
I_C
V_CC
T_J
T_STG
Power Dissipation* (T_C ≤ 75°C)
Device Current*
Collector-Supply Voltage
Junction Temperature (Pulsed RF Operation)
Storage Temperature
Value
25
0.9
32
+250
-65 to +200
Thermal Data
R_TH(J-C)
Junction-case Thermal Resistance*
7.0
* Applies only to rated RF amplifier operation
Unit
W
A
V
°C
°C
°C/W
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