MS2210 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• 255 MHz BANDWIDTH
• GOLD METALLIZATION
• EMITTER SITE BALLASTED
• Pout = 300W MINIMUM
• Gp = 7.0 dB
• LOW THERMAL RESISTANCE
• INPUT/OUTPUT MATCHING
• 15:1 VSWR CAPABILITY
MS2210
DESCRIPTION:
The MS2210 avionics power transistor is a broadband, high peak
pulse power device specifically designed for avionics applications
requiring broad bandwidth with moderate duty cycle and pulse width
constraints such as ground/ship DME/TACAN. The MS2210 is also
designed for specialized applications where reduced power is
provided under pulse formats utilizing short pulse widths and high
burst or overall duty cycles
This device is capable of withstanding 15:1 VSWR mismatch load
conditions at any phase angle under full rated conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
P_DISS
I_C
V_CC
T_J
T_STG
Parameter
Power Dissipation*
Device Current*
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
Thermal Data
R_TH(j-c)
Junction-Case Thermal Resistance*
• Applies only to rated RF operation.
Value
940
24
50
+200
- 65 to + 200
0.16
Unit
W
A
°C
°C
°C/W
MS2210.PDF 4-15-03
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