MS2207 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS

RF & MICROWAVE TRANSISTORS
L-BAND AVIONICS APPLICATIONS
Features
• 1090 MHz
• 50 VOLTS
• 15:1 VSWR CAPABILITY
• INPUT / OUTPUT MATCHING
• P_OUT = 400 WATTS
• G_P = 8.0 dB MINIMUM
• COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2207 is a high power NPN bipolar transistor
specifically designed for TCAS and Mode-S driver
applications. This device is designed for operation
under moderate pulse width and duty cycle pulse
conditions and is capable of withstanding 15:1 output
VSWR at rated conditions.
MS2207
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
P_DISS
I_C
Power Dissipation
Device Current
V_CC
Collector Supply Voltage
T_J
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(J-C)
Junction-case Thermal Resistance
053-7113 Rev - 11-2002
Value
880
24
55
200
-65 to +200
0.17
Unit
W
A
V
°C
°C
°C/W