MS2206 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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FAX: [phone]
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• 1025-1150 MHz
• GOLD METALLIZATION
• INFINITE VSWR CAPABILITY @ RATED CONDITIONS
• Pout = 4 W MINIMUM
• G_P= 10 dB
• COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2206 is a common base, silicon NPN microwave transistor
designed for Class C driver applications under DME or IFF pulse
conditions. This device is capable of withstanding an infinite load
VSWR at any phase angle under rated conditions.
MS2206
.280 4LSL (M115)
Epoxy Sealed
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
P_DISS
V_CE
T_J
I_C
T_STG
Parameter
Power Dissipation
Collector-Emitter Bias Voltage
Junction Temperature
Device Current
Storage Temperature
Thermal Data
R_TH(J-C)
Junction-case Thermal Resistance*
Value
7.5
37
200
1.0
-65 to +200
35
Unit
W
V
ºC
A
ºC
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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