MS2205 Datasheet, PDF (1/3 Pages) CIT Relay & Switch – DPDT Switch Function, 1000Vrms min Dielectric Strength

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RF AND MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• DESIGNED FOR HIGH POWER PULSED IFF, DME,
TACAN APPLICATIONS
• 6.0 W (typ.) IFF 1030–1090 MHz
• 5.0 W (min.) DME 1025–1150 MHz
• 4.0 W (typ.) TACAN 960–1215 MHz
• GAIN 9 dB (typ.)
• VSWR ∞:1 AT RATED CONDITIONS
• LOW THERMAL RESISTANCE
• EMITTER BALLASTED
• INPUT MATCHED COMMON-BASE CONFIGURATION
DESCRIPTION:
The MS2205 is a gold metallized, silicon NPN power transistor
designed for pulsed applications with low duty cycles, such as
IFF, DME, and TACAN. It can withstand infinite VSWR under rated
conditions. The MS2205 is housed in the .250" input-matched
stripline package, resulting in improved broadband performance
and low thermal resistance.
MS2205
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CES
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Device Current*
P_DISS
Total Power Dissipation*
(T_C = °C)
T_j
Junction Temperature
T_stg
Storage Temperature
THERMAL DATA
R_TH(j-c)
Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
Value
45
45
3.5
1.0
21.9
+200
-65 to +150
8.0
Unit
V
V
V
A
W
°C
°C
°C/W
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