MS2200 Datasheet, PDF (1/6 Pages) Advanced Power Technology – RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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FAX: [phone]
RF AND MICROWAVE TRANSISTORS
UHF PULSED APPLICATIONS
Features
• 500 Watts @ 250 µSec Pulse Width, 10% Duty Cycle
• Refractory Gold Metallization
• Emitter Ballasting And Low Resistance For Reliability
and Ruggedness
• Infinite VSWR Capability At Specified Operating
Conditions
• Input Matched, Common Base Configuration
• Balanced Configuration
DESCRIPTION:
The MS2200 is a hermetically sealed, gold metallized silicon NPN
pulse power transistor mounted in a common base balanced
configuration. The MS2200 is designed for applications requiring
high peak power and low duty cycles within the frequency range of
400 – 500 MHz.
MS2200
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CBO
V_CES
V_EBO
I_C
P_DISS
T_J
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
T_STG
Storage Temperature
Value
Unit
65
V
65
V
3.5
V
43.2
A
1167
W
+200
°C
-65 to +150
°C
Thermal Data
R_TH(j-c)
Junction-Case Thermal Resistance
0.15
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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