MS2176 Datasheet, PDF (1/6 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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RF AND MICROWAVE TRANSISTORS
UHF PULSED APPLICATIONS
Features
• 350 WATTS @ 10µSEC PULSE WIDTH, 10% DUTY
CYCLE
• 300 WATTS @ 250µSEC PULSE WIDTH 10% DUTY
CYCLE
• 9.5 DB MIN. GAIN
• REFRACTORY GOLD METALLIZATION
• EMITTER BALLASTING AND LOW THERMAL
RESISTANCE FOR RELIABILITY AND RUGGEDNESS
• INFINITE VSWR CAPABILITY AT SPECIFIED
OPERATING CONDITIONS
DESCRIPTION:
The MS2176 is a gold metallized silicon NPN pulse power transistor
designed for applications requiring high peak power and low duty
cycles within the frequency range of 400 – 500 MHz.
MS2176
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CES
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Device Current
P_DISS
Power Dissipation
T_J
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(j-c)
Junction-Case Thermal Resistance
Value
Unit
65
V
65
V
3.5
V
21.6
A
875
W
+200
°C
-65 to +150
°C
0.2
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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