MS2092 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS

MS2092
RF & MICROWAVE TRANSISTORS
DESCRIPTION
The MS2092 is an internally matched, common base silicon bipolar
device optimized pulsed application in the 600 – 750 MHz frequency
range.
Housed in the industry standard AMPAC™ metal/ceramic package,
this device uses a refractory/gold overlay die geometry for ruggedness
and long-term reliability.
KEY FEATURES
§ Refractory/Gold
Metallization
§ Internal Input Matching
§ Metal/Ceramic Hermetic
Package
§ P_OUT = 440 W Min.
§ G_P = 7.0 dB Gain
APPLICATIONS/BENEFITS
§ Avionics Applications
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25°C)
Symbol
Parameter
Value
Unit
P_DISS Power Dissipation* (T_C 75°C)
I_C
Device Current*
V_CC Collector-Supply Voltage*
T_J Junction Temperature
1500
W
32.0
A
55
V
200
°C
T_STG Storage Temperature
-65 to +200 °C
R_TH(j-c)
THERMAL DATA
Junction-Case Thermal Resistance
* Applies only to rated RF amplifier operation
0.13
°C/W
MS2092.PDF 2-10-04
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