MS1536 Datasheet, PDF (1/4 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS 800 / 900 MHz APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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RF & MICROWAVE TRANSISTORS
F _{800 / 900 MHz APPLICATIONS}
Features
• 900 MHz
• 24 VOLTS
• P_OUT = 60 WATTS
• G_P = 7.0 dB MINIMUM
• INPUT AND OUTPUT MATCHED
• COMMON BASE CONFIGURATION
DESCRIPTION:
The MS1536 is a 28V Class C epitaxial silicon NPN planar
transistor designed primarily for UHF communications.
This device utilizes diffused emitter resistors to achieve
10:1 VSWR capability under specified operating conditions.
Internal input matching provides optimum power gain and
efficiency over the 225 – 400 MHz band.
MS1536
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CBO
V_CES
V_EBO
I_C
P_DISS
T_STG
T_J
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Storage Temperature
Junction Temperature
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-case
Value
55
55
4.0
10
175
-65 to +150
+200
1.0
Unit
V
V
V
A
W
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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