MS1527 Datasheet, PDF (1/4 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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FAX: [phone]
RF & MICROWAVE TRANSISTORS
UHF COMMUNICATIONS APPLICATIONS
Features
• 400 MHz
• 28 VOLTS
• P_OUT = 25 WATTS
• G_P = 9 dB GAIN MINIMUM
• EMITTER BALLASTED
• METAL/CERAMIC PACKAGE
• INTERNAL INPUT MATCHING
• REFRACTORY/GOLD METALIZATION
DESCRIPTION:
The MS1527 is a gold metallized epitaxial silicon NPN planar
transistor using diffused emitter ballast resistors for superior
ruggedness.
The MS1527 can withstand 20:1 VSWR under rated operating
conditions and is internally input matched to optimize power
gain and efficiency over the band.
MS1527
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_DISS
T_J
T_STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-case
Value
60
30
3.5
3.0
70
+200
-65 +150
2.5
Unit
V
V
V
A
W
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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