MS1512 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS

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RF & MICROWAVE TRANSISTORS
UHF TV/LINEAR APPLICATIONS
Features
• 860 MHz
• 20 VOLTS
• CLASS A LINEAR OPERATION
• POUT = 1.0 WATT
• G_P = 10.0 dB MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1512 is a silicon NPN bipolar transistor designed for
UHF linear applications, specifically TV Bands IV and V. The
MS1512 is characterized for high linearity, Class A operation.
Device ruggedness and reliability are maximized with emitter
ballasting and gold metallization.
MS1512
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_DISS
TJ
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(J-C)
Junction-case Thermal Resistance
Value
45
25
3.5
1.2
19.4
+200
-65 to +150
9.0
Unit
V
V
V
A
W
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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