MS1511 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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FAX: [phone]
RF & MICROWAVE TRANSISTORS
UHF COMMUNICATIONS APPLICATIONS
Features
• 400 MHz
• 28 VOLTS
• P_OUT = 70 WATTS
• G_P = 8.4 dB GAIN MINIMUM
• EFFICIENCY 60%
• GOLD METALLIZATION
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1511 is a 28 V Class C epitaxial silicon NPN planar
transistor designed primarily for UHF communications.
This device utilizes diffused emitter resistors to achieve
VSWR of 10:1 under operating conditions, and is internally
input matched to optimize power gain and efficiency over
the 225 – 400 MHz band.
MS1511
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_DISS
T_J
T_STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-case
MS1511.PDF 09-12-02
Value
60
30
4.0
8.0
220
+200
-65 to +150
1.25
Unit
V
V
V
A
W
°C
°C
°C/W