MS1509 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS

RF & MICROWAVE TRANSISTORS
TV/LINEAR APPLICATIONS
Features
• 500 MHz
• 28 VOLTS
• POUT = 100 WATTS
• G_P = 5.5 dB GAIN MINIMUM
• EFFICIENCY 55%
• GOLD METALLIZATION
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1509 is a 28 V gold metallized, Class C epitaxial silicon
NPN planar transistor designed for UHF military and commercial
equipment. The MS1508 is an internally matched, broadband
device optimized for operation within the 100 – 500 MHz fre-
quency range. This device utilizes diffused emitter resistors
to achieve 5:1 VSWR load mismatch capability at rated
operating conditions.
MS1509
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CBO
V_CEO
V_CES
V_EBO
I_C
P_DISS
TJ
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-case
Value
60
33
60
4.0
15
260
+200
-65 to +150
0.67
MS1509.PDF 5-28-03
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Unit
V
V
V
V
A
W
°C
°C
°C/W