MS1508 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS

RF & MICROWAVE TRANSISTORS
TV/LINEAR APPLICATIONS
Features
• 400 MHz
• 28 VOLTS
• POUT = 125 WATTS
• G_P = 7.0 dB GAIN MINIMUM
• EFFICIENCY 60%
• GOLD METALLIZATION
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1508 is a 28 V Class C gold metallized epitaxial silicon
NPN planar transistor designed for UHF military and commercial
equipment. The MS1508 is an internally matched, broadband
device optimized for operation within the 225 – 400 MHz fre-
quency range. This device utlizies diffused emitter resistors
to achieve 10:1 VSWR load mismatch capability at rated
operating conditions.
MS1508
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_DISS
TJ
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-case
053-7089 Rev - 10-2002
Value
60
33
4.0
15
270
+200
-65 to +150
0.65
Unit
V
V
V
A
W
°C
°C
°C/W