MS1506 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

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MONTGOMERYVILLE, PA
18936-1013
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RF & MICROWAVE TRANSISTORS
VHF MOBILE APPLICATIONS
Features
• 160 MHz
• 13.6 VOLTS
• POUT = 40 WATTS
• G_P = 9.0 dB MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1506 is a 13.6 volt Class C epitaxial silicon NPN planar
transistor designed primarily for VHF communications. The
MS1506 utilizes an emitter ballasted die geometry to withstand
severe load mismatch conditions.
MS1506
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CBO
V_CEO
V_CES
V_EBO
I_C
P_DISS
TJ
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(J-C)
Junction-case Thermal Resistance
36
18
36
4.0
8.0
70
+200
-65 to +150
1.2
V
V
V
V
A
W
°C
°C
° C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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