MS1503 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS WIDE BAND VHF/UHF APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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FAX: [phone]
RF & MICROWAVE TRANSISTORS
WIDE BAND VHF/UHF APPLICATIONS
Features
• 400 MHz
• 28 VOLTS
• GOLD METALIZATION
• P_OUT = 100 WATTS
• G_P = 7.0 dB GAIN MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1503 is a 28V Class C epitaxial silicon NPN planar
transistor designed primarily for UHF communications. The
device utilizes diffused emitter resistors to achieve infinite
VSWR capability under operating conditions. Internal inpedance
matching produces optimum power gain and efficiency over the
225-400MHz band.
MS1503
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_DISS
T_J
T_STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
60
33
4.0
4.0
250
+200
-65 +150
Unit
V
V
V
A
W
°C
°C
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-case
0.7
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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