MS1501 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS

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RF & MICROWAVE TRANSISTORS
UHF TV/LINEAR APPLICATIONS
Features
• 860 MHz
• P_OUT = 2 WATTS
• G_P = 8.5 dB MINIMUM
• GOLD METALLIZATION
• CLASS A LINEAR OPERATION
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1501 is a silicon NPN bipolar device specifically designed
for high linearity applications in the UHF frequency range
including TV Bands IV and V.
Gold metallization and emitter ballasting assure high reliability
under Class A linear amplifier operation.
MS1501
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_DISS
T_J
T_stg
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Device Currnet
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Data
R_TH(J-C)
Junction-case Thermal Resistance
Value
45
25
4
800
15.9
+200
-65 to +150
11.0
Unit
V
V
V
mA
W
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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