MS1490 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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RF & MICROWAVE TRANSISTORS
UHF MOBILE APPLICATIONS
Features
• 512 MHz
• 12.5 VOLTS
• P_OUT = 50 W
• G_P = 5.2 dB MINIMUM
• GOLD METALIZATION
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1490 is a 12.5 volt silicon NPN transistor designed
primarily for UHF communications. The device utilizes an
emitter ballasted die geometry capable of operating into an
infinite load VSWR under specified operating conditions.
MS1490
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_TOT
T_STG
T_J
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Storage Temperature
Junction Temperature
Thermal Data
R_TH(J-C)
Junction-case Thermal Resistance
Value
36
16
4.0
10
175
-65 to +200
+200
1.0
Unit
V
V
V
A
W
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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