MS1480 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

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MONTGOMERYVILLE, PA
18936-1013
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RF & MICROWAVE TRANSISTORS
UHF MOBILE APPLICATIONS
Features
• 470 MHz
• 12.5 VOLTS
• POUT = 45 W
• G_P = 5.0 dB MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1480 is an epitaxial silicon NPN planar transistor
designed primarily for 12.5 V Class C UHF communications.
This device utilizes diffused emitter resistors to achieve
infinite VSWR capability under specified operating conditions.
MS1480
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CBO
V_CEO
V_CES
V_EBO
P_DISS
I_C
TJ
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Power Dissipation
Device Current
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-case
Value
36
16
36
4.0
175
10.0
200
-65 to +150
1.0
Unit
V
V
V
V
W
A
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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