MS1455 Datasheet, PDF (1/4 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS 800 - 900 MHz APPLICATIONS

RF & MICROWAVE TRANSISTORS
800 - 900 MHz APPLICATIONS
Features
• 836 MHz
• 12.5 VOLTS
• P_OUT = 45 WATTS
• G_P = 4.7 dB MINIMUM
• COMMON BASE CONFIGURATION
DESCRIPTION:
The MS1455 is a 12.5 V Class C epitaxial silicon NPN planar
transistor designed for amplifier applications in the
806-866 MHz frequency range. Internal impedance matching
assures optimum gain and efficiency across the entire
frequency band. Gold metalization and emitter ballast resistors
assures infinite VSWR capability and long term reliability.
MS1455
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
V_CEO
Collector-Emitter Voltage
V_CES
Collector-Emitter Voltage
P_DISS
I_C
Power Dissipation
Device Current
TJ
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-case
053-7078 Rev - 10-2002
Value
36
4.0
18
36
150
9.0
200
-65 to +150
1.2
Unit
V
V
V
V
W
A
°C
°C
°C/W