MS1454 Datasheet, PDF (1/5 Pages) Advanced Power Technology – RF AND MICROWAVE TRANSISTORS 806-960 MHZ CELLULAR BASE STATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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FAX: [phone]
RF AND MICROWAVE TRANSISTORS
806-960 MHZ CELLULAR BASE STATIONS
MS1454
Features
• Gold Metallization
• Diffused Emitter Ballasting
• Internal Input Matching
• Designed for Linear Operation
• High Saturated Power Capability
• Common Emitter Configuration
• P_OUT
• Gain
30 W MIN
7.5 dB
• Efficiency 55% (Typ)
• 20:1 VSWR
• Overdrive Survivability 5 dB
DESCRIPTION:
The MS1454 gold/metallized epitaxial silicon NPN planar transistor
uses diffused emitter ballast resistors for high linearity class AB
operation in cellular base station applications.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
P_DISS
Total Power Dissipation
I_C
Collector Current
T_j
Junction Temperature
T_stg
Storage Temperature
Value
48
25
3.5
88
7.5
+200
-65 to +150
THERMAL DATA
R_TH(j-c)
Junction-Case Thermal Resistance
2
Unit
V
V
V
W
A
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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