MS1453 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS 800-900 MHz BASESTATION APPLICATIONS

RF & MICROWAVE TRANSISTORS
800-900 MHz BASESTATION APPLICATIONS
Features
• 800-900 MHz
• 24 VOLTS
• COMMON EMITTER
• GOLD METALIZATION
• INTERNAL INPUT MATCHING
• CLASS AB LINEAR OPERATION
• P_OUT = 30 W MIN. WITH 7.5 dB GAIN
MS1453
DESCRIPTION:
The MS1453 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation in
cellular base station applications.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CBO
V_CES
V_EBO
I_C
P_DISS
TJ
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-case
Value
50
45
5.0
5.0
43
+200
-65 to +150
3.0
Unit
V
V
V
A
W
°C
°C
°C/W
MS1453.PDF 12-10-03
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