MS1451 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS 800-960 MHz BASE STATION APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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FAX: [phone]
RF & MICROWAVE TRANSISTORS
800-960 MHz BASE STATION APPLICATIONS
Features
• 800-960 MHz
• 24 VOLTS
• CLASS AB LINEAR OPERATION
• POUT = 15 WATTS
• G_P = 8.0 dB MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1451 is a gold metallized silicon NPN planar transistor
designed for high linearity Class AB operation in cellular
base station applications. The MS1451 is designed as a
medium power output device or as the driver for MS1452.
Diffused emitter ballast resistors provide thermal stability
and reliability under Class AB linear operation.
MS1451
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CBO
V_CEO
V_CES
V_EBO
P_DISS
I_C
TJ
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Power Dissipation
Device Current
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-case
Value
48
30
45
3.5
29
2.5
+200
-65 to +150
6.0
Unit
V
V
V
V
W
A
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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