MS1426 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: [phone]
FAX: [phone]
RF & MICROWAVE TRANSISTORS
UHF MOBILE APPLICATIONS
Features
• 470 MHz
• 12.5 VOLTS
• P_OUT = 10 WATTS
• G_P = 8.0 dB MINIMUM
• COMMON EMITTER CONFIRGURATION
DESCRIPTION:
The MS1426 is a epitaxial silicon NPN planar transistor designed
for Class C driver applications in the 450 - 512 MHz frequency
range. This device uses an emitter ballasted die geometry
specifically designed for optimum stable power gain, maximum
efficiency and infinite VSWR capability.
MS1426
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CBO
V_CEO
V_CES
V_EBO
I_C
P_DISS
TJ
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(J-C)
Junction-case Thermal Resistance
Value
36
16
36
4.0
2.5
58
200
-65 to +150
3.0
Unit
V
V
V
V
A
W
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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