MS1409 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTOR VHF COMMUNICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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FAX: [phone]
RF & MICROWAVE TRANSISTOR
VHF COMMUNICATIONS
Features
• 175 MHz
• 28 VOLTS
• P_OUT = 2.5 W
• G_P = 10 dB MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1409 is a NPN silicon transistor designed for high
power gain VHF and UHF communication applications.
Gold metalization and diffused emitter ballast resistors
provide superior long term reliability.
MS1409
1. Emitter
2. Base
3. Collector
TO-39
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Symbol
Parameter
V_CBO
V_CEO
V_EBO
P_DISS
Collector-base Voltage
Collector-emitter Voltage
Emitter-base Voltage
Total Power Dissipation
I_C
Collector Peak Current
T_J
T_STG
Junction Temperature
Storage Temperature
Thermal Data
R_TH(J-CASE) Thermal Resistance Junction-case
Value
65
40
4.0
7.0
1.0
200
-65 to 200
25
Unit
V
V
V
W
A
ºC
ºC
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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