MS1406 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: [phone]
FAX: [phone]
RF & MICROWAVE TRANSISTORS
FM MOBILE APPLICATIONS
Features
• 175MHz
• 12.5 VOLTS
• GOLD METALIZATION
• Pout = 20WATTS
• Gp = 8.0 dB MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1406 is a silicon NPN transistor designed for
12.5V AM Class C amplifiers operating in the 118–136 MHz
aviation band and for 28V FM Class C amplifiers used in
ground station transmitters. Diffused emitter ballast and
gold metalization provide maximum ruggedness and
reliability.
MS1406
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
Tj
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Total Dissipation
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-case
Value
65
35
4.0
3.0
30
200
-65 to +200
5.8
Unit
V
V
V
A
W
ºC
ºC
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.