MS1402 Datasheet, PDF (1/3 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS

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18936-1013
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RF AND MICROWAVE TRANSISTORS
UHF MOBILE APPLICATIONS
Features
• 450 - 512 MHz
• 12.5 Volts
• Efficiency 55%
• P_OUT = 2.0 W Min.
• G_P = 10.0 dB Gain
DESCRIPTION:
The MS1402 is a 12.5 V Class C epitaxial silicon NPN planar
transistor designed primarily for UHF communications. This device
utilizes improved metallization to achieve infinite VSWR at rated
operating conditions.
MS1402
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
V_CES
Collector-Emitter Voltage
Collector-Emitter Voltage
V_EBO
I_C
P_DISS
T_J
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
T_STG
Storage Temperature
Value
Unit
36
V
16
V
36
V
4.0
V
0.75
A
5
W
+200
°C
-65 to +150
°C
Thermal Data
R_TH(j-c)
Junction-Case Thermal Resistance
35
°C/W
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