MS1336 Datasheet, PDF (1/4 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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RF & MICROWAVE TRANSISTORS
VHF MOBILE APPLICATIONS
Features
• 175 MHz
• 12.5 VOLTS
• POUT = 30W MINIMUM
• GP = 10 dB GAIN
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor
designed primarily for Class C, VHF communication applications.
The MS1337 utilizes an emitter ballasted die geometry to
withstand severe load mismatch conditions.
MS1336
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CBO
V_CEO
V_CES
V_EBO
I_C
P_DISS
TJ
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(J-C)
Junction-case Thermal Resistance
Value
36
18
36
4.0
8.0
70
+200
-65 to +150
1.2
Unit
V
V
V
V
A
W
°C
°C
° C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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