MS1329 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS

RF & MICROWAVE TRANSISTORS
VHF FM APPLICATIONS
Features
• 150 MHz
• 28 VOLTS
• POUT = 60W
• G_P = 7.0 dB MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1629 is an epitaxial silicon NPN transistor designed
primarily for 12.5 V Class C, AM amplifier applications in the
118 – 136 MHz and 28 V Class C ground station transmitters.
Emitter ballast resistors and gold metalitzation provide
optimum VSWR capability.
MS1329
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CBO
Collector- Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
P_DISS
I_C
Power Dissipation
Collector current
TJ
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-Case
053-7067 Rev - 10-2002
Value
65.0
35.0
4.0
75.0
6.5
+200
-65 to +150
2.3
Unit
V
V
V
W
A
°C
°C
°C/W