MS1279 Datasheet, PDF (1/4 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: [phone]
FAX: [phone]
RF & MICROWAVE TRANSISTORS
TV/LINEAR APPLICATIONS
Features
• 170- 230 MHz
• 25 VOLTS
• P_OUT = 20 WATTS
• G_P = 8.0 dB GAIN MINIMUM
• GOLD METALLIZATION
• INTERNAL INPUT MATCHING
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1279 is a gold metallized epitaxial silicon NPN planar
transistor using diffused emitter ballast resistors for high
linearity Class AB operation in VHF and Band III television
transmitters and transposers.
MS1279
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CEO
V_CES
V_EBO
I_C
P_DISS
TJ
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-case
Value
35
60
4.0
8.0
140
+200
-65 to +150
1.5
Unit
V
V
V
A
W
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.