MS1278 Datasheet, PDF (1/4 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS

RF & MICROWAVE TRANSISTORS
TV/LINEAR APPLICATIONS
Features
• 170 - 230 MHz
• 28 VOLTS
• POUT = 100 WATTS
• G_P = 11.0 dB GAIN MINIMUM
• GOLD METALLIZATION
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1278 is a gold metallized epitaxial silicon NPN planar
transistor using diffused emitter ballast resistors for high
linearity Class AB operation in VHF and Band III television
transmitters and transposers.
MS1278
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_DISS
TJ
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
T_STG
Storage Temperature
Value
65
33
3.5
16
150
+200
-65 to +150
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-case
1.2
MS1278.PDF 5-28-03
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Unit
V
V
V
A
W
°C
°C
°C/W