MS1277 Datasheet, PDF (1/4 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS

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18936-1013
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RF & MICROWAVE TRANSISTORS
TV/LINEAR APPLICATIONS
Features
• 170 - 230 MHz
• 28 VOLTS
• P_OUT = 14 WATTS
• G_P = 14 dB GAIN MINIMUM
• GOLD METALLIZATION
• INTERNAL INPUT MATCHING
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1277 is a gold metallized epitaxial silicon NPN planar
transistor using diffused emitter ballast resistors for high
linearity Class A operation in VHF and Band III television
transmitters and transposers.
MS1277
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_DISS
TJ
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-case
Value
60
35
4.0
10
140
+200
-65 to +150
1.5
Unit
V
V
V
A
W
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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