MS1262 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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FAX: [phone]
RF & MICROWAVE TRANSISTOR
UHF MOBILE APPLICATIONS
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Features
• 512 MHz
• 12.5 VOLTS
• P_OUT = 15 W MINIMUM
• G_P = 7.8 dB
• INPUT MATCHED
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1262 is a NPN silicon RF power transistor designed for
12.5 volt UHF amplifier applications operating to 512 MHz. The
MS1262 has internal impedance matching for broadband
operation and diffused emitter ballast for high load VSWR
tolerance.
MS1262
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_TOT
T_STG
T_J
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Storage Temperature
Junction Temperature
Thermal Data
R_θJC
Thermal Resistance Junction-case
Value
36
16
4.0
3.4
370.5
-65 to +150
+200
4.6
Unit
V
V
V
A
W
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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