MS1261 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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RF & MICROWAVE TRANSISTORS
VHF MOBILE APPLICATIONS
• Features
• 175 MHz
• 12.5 VOLTS
• P_OUT = 15 WATTS
• Gp = 12 dB MINIMUM
• INPUT IMPEDANCE MATCHING
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1261 is a Class C 12.5V epitaxial silicon NPN planar
transistor designed primarily for UHF communications. This
devices utilizes a gold metallized, emitter ballasted die
geometry for superior reliability and infinite VSWR capability.
MS1261
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CBO
V_CEO
V_CES
V_EBO
I_C
P_DISS
T_J
T_STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-case
Value
36
18
36
4.0
2.5
34
+200
-65 to +150
8.75
Unit
V
V
V
V
A
W
ºC
ºC
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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