MS1253 Datasheet, PDF (1/4 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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FAX: [phone]
RF & MICROWAVE TRANSISTORS
HF/VHF APPLICATIONS
Features
• 50 MHz
• 12.5 VOLTS
• P_OUT = 70 WATTS
• G_p = 10 dB MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1253 is a 12.5 V Class C epitaxial silicon NPN
transistor designed primarily for land mobile transmitter
applications. This device utilizes emitter ballasting, is
extremely stable and capable of withstanding high VSWR
under operating conditions.
MS1253
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CBO
V_CEO
V_EBO
P_DISS
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Power Dissipation
Device Current
TJ
Junction Temperature
T_STG
Storage Temperature
Value
45
18
3.5
183
12.0
200
-65 to +150
Unit
V
V
V
W
A
°C
°C
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-case
1.05
° C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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