MS1251 Datasheet, PDF (1/6 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

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RF & MICROWAVE TRANSISTORS
VHF MOBILE APPLICATIONS
Features
• 175 MHz
• 12.5 VOLTS
• P_OUT = 45 WATTS
• G_P = 6.5 dB MINIMUM
• INPUT MATCHED
• COMMON EMITTER CONFIGURATION
• VSWR = 20:1
DESCRIPTION:
The MS1251 is an epitaxial silicon NPN planar transistor designed
primarily for 12.5 V, Class C VHF communications. This device utilizes
diffused emitter resistors to achieve 20:1 VSWR capability at rated
operating conditions.
MS1251
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CBO
Collector - Base Voltage
V_CEO
Collector - Emitter Voltage
V_CES
Collector - Emitter Voltage
V_EBO
Emitter - Base Voltage
I_C
Device Current
P_DISS
Power Dissipation
T_J
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(J-C)
Junction-Case Thermal Resistance
Value
36
18
36
4.0
6.0
145
+200
-65 to +150
1.2
Unit
V
V
V
V
A
W
°C
°C
°C/W
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