MS1227 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
Features
• 30 MHz
• 12.5 VOLTS
• GOLD METALIZATION
• P_OUT = 20 W MINIMUM
• G_P = 15 dB
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1227 is a 12.5V epitaxial NPN planar transistor designed
primarily for SSB communications. This device utilizes emitter
ballasting for improved ruggedness and reliability.
MS1227
ABSOLUTE MAXIMUM RATINGS
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_DISS
T_J
T_STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Data
R_TH(J-C)
Junction-case Thermal Resistance
Value
36
18
4.0
4.5
80
+200
-65 to +150
2.2
MS1227.PDF 10-28-02
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Unit
V
V
V
A
W
°C
°C
° C/W