MS1226 Datasheet, PDF (1/3 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
Features
30 MHz
28 VOLTS
IMD = -28 dB
P_OUT = 30 WATTS
G_P = 18 dB MINIMUM
COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1226 is a 28V epitaxial silicon NPN planar transistor
designed primarily for SSB communications. This device
utilizes emitter ballasting for improved ruggedness and
reliability.
MS1226
ABSOLUTE MAXIMUM RATINGS
Symbol
Paramete
r
V_CBO
Co llector-base Voltage
V_CEO
Co llector-emitter Voltage
V_EBO
Emit ter-Base Voltage
I_C
Dev ice Current
P_DISS
Po wer Dissipation
T_J
Ju nction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(J-C)
Junction-case Thermal Resistance
053-7055 Rev - 10-2002
Value
U
nit
65
V
36
V
4.0
V
4.5
A
80
W
+200
C
-65 to +150
C
2.2
C/W