MS1204 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: [phone]
FAX: [phone]
RF AND MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
Features
• CLASS C TRANSISTOR
• FREQUENCY 136MHz
• VOLTAGE 28V
• POWER OUT 80W
• POWER GAIN 9.0dB
• COMMON EMITTER
DESCRIPTION:
The SD1019 is a 28 volt epitaxial silicon NPN planar transistor
designed primarily for VHF communications. This device utilizes
nichrome aluminum metallization to achieve infinite VSWR at rated
operating conditions.
MS1204
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_DISS
T_J
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
T_STG
Storage Temperature
Value
Unit
65
V
35
V
4
V
9
A
117
W
+ 200
°C
- 65 to + 150
°C
Thermal Data
R_TH(j-c)
Junction-Case Thermal Resistance
1.7
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.