MS1079 Datasheet, PDF (1/4 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
Features
• 30 MHz
• 50 VOLTS
• P_OUT = 220 W
• G_P = 13 dB MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1079 is a 50 V epitaxial silicon NPN planar transistor
designed primarily for SSB communications. This device
utilizes emitter ballasting for improved ruggedness and
reliability.
MS1079
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CBO
V_CEO
Collector-Base Voltage
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Device Current
P_DISS
Power Dissipation
T_J
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(J-C)
Junction-case Thermal Resistance
053-7052 Rev - 10-2002
Value
110
55
4.0
12
320
+200
-65 to +150
0.7
Unit
V
V
V
A
W
°C
°C
°C/W