MS1076 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

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MONTGOMERYVILLE, PA
18936-1013
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RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
Features
• 30 MHz
• 28 VOLTS
• GOLD METALLIZATION
• P_OUT = 220 W PEP
• G_P = 12 dB GAIN MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1076 is a 28 volt epitaxial NPN silicon planar transistor
designed primarily for SSB and VHF communications. This
device utilizes an emitter ballasted die geometry for maximum
ruggedness and reliability.
MS1076
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CBO
V_CEO
V_EBO
IC
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Device Current
P_DISS
T_J
T_STG
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Data
R_TH(J-C)
Junction - Case Thermal Resistance
Value
70
35
4.0
16
320
+200
- 65 to +150
0.7
Unit
V
V
V
A
W
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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