MS1051 Datasheet, PDF (1/4 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

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MONTGOMERYVILLE, PA
18936-1013
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RF & MICROWAVE TRANSISTORS
HF SSB APLICATIONS
Features
• 30 MHz
• 12.5 VOLTS
• P_OUT = 100 WATTS
• G_PE = 12.0 dB MINIMUM
• IMD = –30 dBc
• GOLD METALLIZATION
• COMMON EMITTER CONFIGURATION
MS1051
DESCRIPTION:
The MS1051 is a 12.5 V Class C epitaxial silicon NPN planar
transistor designed primarily for HF communications. This
device utilizes state-of-the-art diffused emitter ballasting to
achieve extreme ruggedness under severe operating
conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_DISS
T_J
T_STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage TEmperature
Value
36
18
4.0
20
290
+200
-65 to +150
THERMAL DATA
R_TH(J-C)
Thermal Resistance Junction-case
0.6
Unit
V
V
V
A
W
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 11/2005