MS1011 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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RF AND MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
Features
• OPTIMIZED FOR SSB
• 30 MHz
• 50 VOLTS
• IMD — 30 dB
• GOLD METALLIZATION
• COMMON EMITTER
• P_OUT = 250 W PEP WITH 14.5 dB GAIN
MS1011
DESCRIPTION:
The MS1011 is a 50 V epitaxial silicon NPN planar transistor
designed primarily for SSB and VHF communications. This device
utilizes emitter ballasting for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_DISS
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
110
V
55
V
4
V
40
A
330
W
+200
°C
–65 to +150
°C
THERMAL DATA
R_TH(j-c)
Junction-Case Thermal Resistance
0.4
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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