MS1007 Datasheet, PDF (1/4 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

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18936-1013
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RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
Features
• 30 MHz
• 50 VOLTS
• P_OUT = 150 WATTS
• G_P = 14 dB MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1007 is a 50V epitaxial silicon NPN planar transistor
designed primarily for SSB communications. This device
utilizes emitter ballasting to achieve extreme ruggedness
under severe operating conditions.
MS1007
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_DISS
T_J
T_STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-case
Value
110
55
4.0
10
233
+200
-65 to +150
0.75
Unit
V
V
V
A
W
°C
°C
° C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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